MMBV3102LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon Tuning Diode

MMBV3102LT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Pb−Free Package is Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Device Dissipation @ T_A = 25°C
Derate above 25°C
V_R
30
Vdc
I_F
200
mAdc
P_D
225
mW
1.8
mW/°C
Junction Temperature
T_J
+125
°C
Storage Temperature Range
T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
3
Cathode
1
Anode
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
M4CM G
G
1
M4C = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBV3102LT1 SOT−23 3,000 / Tape & Reel
MMBV3102LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBV3102LT1/D