MMBTH10M3T5G Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN VHF/UHF Transistor

MMBTH10M3T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I_C = 1.0 mAdc, I_B = 0)
Collector−Base Breakdown Voltage
(I_C = 100 μAdc, I_E = 0)
Emitter−Base Breakdown Voltage
(I_E = 10 μAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 25 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = 2.0 Vdc, I_C = 0)
V_(BR)CEO
25
−
−
Vdc
V_(BR)CBO
30
−
−
Vdc
V_(BR)EBO
3.0
−
−
Vdc
I_CBO
−
−
100
nAdc
I_EBO
−
−
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = 4.0 mAdc, V_CE = 10 Vdc)
Collector−Emitter Saturation Voltage
(I_C = 4.0 mAdc, I_B = 0.4 mAdc)
Base−Emitter On Voltage
(I_C = 4.0 mAdc, V_CE = 10 Vdc)
h_FE
60
V_CE(sat)
−
V_BE
−
−
−
−
−
0.5
Vdc
−
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = 4.0 mAdc, V_CE = 10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V_CB= 10 Vdc, I_E = 0, f = 1.0 MHz)
Common−Base Feedback Capacitance
(V_CB= 10 Vdc, I_E = 0, f = 1.0 MHz)
Collector Base Time Constant
(I_C= 4.0 mAdc, V_CB = 10 Vdc, f = 31.8 MHz)
f_T
650
−
MHz
−
C_cb
−
−
0.7
pF
C_rb
−
−
0.65
pF
rb′C_c
−
−
9.0
ps
http://onsemi.com
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