MMBTH10M3T5G Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN VHF/UHF Transistor

MMBTH10M3T5G
NPN VHF/UHF Transistor
The MMBTH10M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
VHF/UHF applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
THERMAL CHARACTERISTICS
V_CEO
25
Vdc
V_CBO
30
Vdc
V_EBO
3.0
Vdc
Characteristic
Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T_A = 25°C
Derate above 25°C
P_D
mW
265
mW/°C
2.1
Thermal Resistance,
Junction−to−Ambient
R_qJA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
P_D
640
mW
5.1 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
195 °C/W
Junction and Storage Temperature
T_J, T_stg −55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
AJ
M
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 1
AJ M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTH10M3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 − Rev. 0
Publication Order Number:
MMBTH10M3/D