MMBTA55L Datasheet, PDF (2/5 Pages) ON Semiconductor – Driver Transistors

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mAdc, I_B = 0)
MMBTA55
MMBTA56, SMMBTA56
V_(BR)CEO
Vdc
−60
−
−80
−
Emitter −Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CE = −60 Vdc, I_B = 0)
Collector Cutoff Current
(V_CB = −60 Vdc, I_E = 0)
MMBTA55
(V_CB = −80 Vdc, I_E = 0)
MMBTA56, SMMBTA56
V_(BR)EBO
I_CES
I_CBO
−4.0
−
−
−
−
−0.1
−0.1
−0.1
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mAdc, V_CE = −1.0 Vdc)
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −100 mAdc, I_B = −10 mAdc)
Base −Emitter On Voltage
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
h_FE
−
100
−
100
−
V_CE(sat)
−
Vdc
−0.25
V_BE(on)
−
Vdc
−1.2
Current −Gain − Bandwidth Product (Note 4)
(I_C = −100 mAdc, V_CE = −1.0 Vdc, f = 100 MHz)
f_T
MHz
50
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
TURN-ON TIME
-1.0 V
V_CC
+40 V
TURN-OFF TIME _+VBB
V_CC
+40 V
5.0 ms
+10 V
0
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
5.0 ms
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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