|
MMBTA55L Datasheet, PDF (1/5 Pages) ON Semiconductor – Driver Transistors | |||
|
MMBTA55LâSeries,
MMBTA56LâSeries,
SMMBTA56LâSeries
Driver Transistors
PNP Silicon
Features
⢠S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECâQ101 Qualified and
PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO
Vdc
â60
â80
Collector âBase Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO
Vdc
â60
â80
Emitter âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VEBO
IC
â4.0
â500
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
SOTâ23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
2xx M G
G
1
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 â Rev. 8
Publication Order Number:
MMBTA55LT1/D
|
▷ |