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| MMBTA05LT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Driver Transistors NPN Silicon | |||
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MMBTA05LT1G, MMBTA06LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA05
MMBTA06
Emitter âBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA05
MMBTA06
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector âEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base âEmitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
V(BR)CEO
60
80
V(BR)EBO
4.0
ICES
â
ICBO
â
â
hFE
100
100
VCE(sat)
â
VBE(on)
â
fT
100
Max
Unit
Vdc
â
â
â
Vdc
0.1
mAdc
mAdc
0.1
0.1
â
â
â
0.25
Vdc
1.2
Vdc
â
MHz
5.0 ms
+10 V
0
tr = 3.0 ns
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
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