MMBTA05LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Driver Transistors NPN Silicon

MMBTA05LT1G,
MMBTA06LT1G
Driver Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBTA05LT1
60
MMBTA06LT1
80
Collector −Base Voltage
V_CBO
Vdc
MMBTA05LT1
60
MMBTA06LT1
80
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_EBO
I_C
4.0
Vdc
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1) T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
1H M G
G
1GM M G
G
MMBTA05LT1
MMBTA06LT1
1H, 1GM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
October, 2010 − Rev. 5
Publication Order Number:
MMBTA05LT1/D