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MMBT8099LT1 Datasheet, PDF (2/8 Pages) ON Semiconductor – Amplifier Transistor
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MMBT8099LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3.)
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3.)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TURN-ON TIME
-1.0 V
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
Symbol
Min
V(BR)CEO
80
V(BR)CBO
80
V(BR)EBO
6.0
ICES
–
ICBO
–
–
IEBO
–
–
hFE
100
100
75
VCE(sat)
–
–
VBE(on)
–
0.6
fT
150
Cobo
–
Cibo
–
Max
Unit
Vdc
–
Vdc
–
–
Vdc
0.1
µAdc
µAdc
0.1
–
µAdc
0.1
–
–
300
–
–
Vdc
0.4
0.3
Vdc
–
0.8
–
MHz
pF
6.0
pF
25
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
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