MMBT8099LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Amplifier Transistor

MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
Characteristic
Symbol
Total Device Dissipation FR–5 Board
P_D
(Note 1.) T_A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient (Note 1.)
R_θJA
Total Device Dissipation Alumina
P_D
Substrate (Note 2.) T_A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient (Note 2.)
R_θJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Value
80
80
6.0
500
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAM
KB M
KB = Specific Device Marking
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT8099LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
January, 2001 – Rev. 0
Publication Order Number:
MMBT8099LT1/D