MMBT6521LT1G_16 Datasheet, PDF (2/7 Pages) ON Semiconductor – Amplifier Transistor

MMBT6521LT1G, SMMBT6521LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(I_C = 0.5 mAdc, I_B = 0)
V_(BR)CEO
25
Vdc
−
Emitter −Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
Vdc
4.0
−
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
−
0.5
mAdc
Emitter Cutoff Current
(V_EB = 5.0 Vdc, I_C = 0)
I_EBO
−
nAdc
10
ON CHARACTERISTICS
DC Current Gain
(I_C = 100 mAdc, V_CE = 10 Vdc)
(I_C = 2.0 mAdc, V_CE = 10 Vdc)
h_FE
−
150
−
300
600
Collector −Emitter Saturation Voltage
(I_C = 50 mAdc, I_B = 5.0 mAdc)
V_CE(sat)
−
Vdc
0.5
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
−
pF
3.5
Noise Figure
(I_C = 10 mAdc, V_CE = 5.0 Vdc, Power Bandwidth = 15.7 kHz,
3.0 dB points @ = 10 Hz and 10 kHz)
NF
dB
−
3.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
R_S
i_n
e_n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V
+10.9 V
275
10 < t₁ < 500 ms
DUTY CYCLE = 2%
t₁
10 k
0
C_S < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns ^1N916
+ 3.0 V
275
C_S < 4.0 pF*
Figure 2. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 3. Turn−Off Time
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