MMBT6521LT1G_16 Datasheet, PDF (1/7 Pages) ON Semiconductor – Amplifier Transistor

MMBT6521LT1G,
SMMBT6521LT1G
Amplifier Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
25
40
4.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SOT− 23 (TO −236)
CASE 318 −08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
RO M G
G
1
RO = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT6521LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBT6521LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
October, 2016 − Rev. 7
Publication Order Number:
MMBT6521LT1/D