MMBT2484LT1 Datasheet, PDF (2/8 Pages) Motorola, Inc – Low Noise Transistor

MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
—
250
—
—
800
Collector–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
Vdc
0.35
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
Vdc
0.95
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
—
6.0
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
—
6.0
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
dB
—
3.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
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