MMBT2484LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Low Noise Transistor

ON Semiconductort
Low Noise Transistor
NPN Silicon
MMBT2484LT1
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
60
VCBO
60
VEBO
6.0
IC
100
Characteristic
Symbol
Max
Total Device Dissipation FR–5 Board(1)
PD
225
TA = 25°C
Derate above 25°C
1.8
Thermal Resistance, Junction to Ambient
R_qJA
556
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
–55 to +150
MMBT2484LT1 = 1U
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
60
—
Vdc
60
—
Vdc
5.0
—
—
10
nAdc
—
10
µAdc
nAdc
—
10
© Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 2
Publication Order Number:
MMBT2484LT1/D