MMBT2222ATT1_10 Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistor

MMBT2222ATT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I_C = 1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = 10 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Base Cutoff Current
(V_CE = 60 Vdc, V_EB = 3.0 Vdc)
Collector Cutoff Current
(V_CE = 60 Vdc, V_EB = 3.0 Vdc)
V_(BR)CEO
40
V_(BR)CBO
75
V_(BR)EBO
6.0
I_BL
−
I_CEX
−
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I_C = 0.1 mAdc, V_CE = 10 Vdc)
(I_C = 1.0 mAdc, V_CE = 10 Vdc)
(I_C = 10 mAdc, V_CE = 10 Vdc)
(I_C = 150 mAdc, V_CE = 10 Vdc)
(I_C = 500 mAdc, V_CE = 10 Vdc)
Collector −Emitter Saturation Voltage
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
Base −Emitter Saturation Voltage
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
H_FE
35
50
75
100
40
V_CE(sat)
−
−
V_BE(sat)
0.6
−
Current −Gain − Bandwidth Product
(I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(V_CE = 10 Vdc, I_C = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V_CE = 10 Vdc, I_C = 10 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V_CE = 10 Vdc, I_C = 10 mAdc, f = 1.0 kHz)
Output Admittance
(V_CE = 10 Vdc, I_C = 10 mAdc, f = 1.0 kHz)
Noise Figure
(V_CE = 10 Vdc, I_C = 100 mAdc, R_S = 1.0 k ohms, f = 1.0 kHz)
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
NF
300
−
−
0.25
−
75
25
−
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(V_CC = 3.0 Vdc, V_BE = − 0.5 Vdc,
I_C = 150 mAdc, I_B1 = 15 mAdc)
t_d
−
t_r
−
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
I_B1 = I_B2 = 15 mAdc)
t_s
−
t_f
−
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Max
Unit
−
Vdc
−
Vdc
−
Vdc
20
nAdc
10
nAdc
−
−
−
−
−
−
Vdc
0.3
1.0
Vdc
1.2
2.0
−
MHz
8.0
pF
30
pF
1.25
4.0
kW
X 10^{− 4}
375
−
200
mmhos
4.0
dB
10
ns
25
225
ns
60
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