MMBT2222ATT1_10 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

MMBT2222ATT1
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
P_D
R_qJA
150
mW
833
°C/W
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
MARKING DIAGRAM
1P M G
G
1
1P
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT2222ATT1G SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
October, 2010 − Rev. 4
Publication Order Number:
MMBT2222ATT1/D