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MMBT2222ATT1 Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistor
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MMBT2222ATT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
V(BR)CEO
40
V(BR)CBO
75
V(BR)EBO
6.0
IBL
—
ICEX
—
HFE
35
50
75
100
40
VCE(sat)
—
—
VBE(sat)
0.6
—
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
—
—
0.25
—
75
25
—
td
—
tr
—
ts
—
tf
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
20
nAdc
10
nAdc
—
—
—
—
—
—
Vdc
0.3
1.0
Vdc
1.2
2.0
—
MHz
8.0
pF
30
pF
1.25
k ohms
4.0
X 10− 4
375
—
200
mmhos
4.0
dB
10
ns
25
225
ns
60
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