MMBT2222ATT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

MMBT2222ATT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
P_D
R_θJA
150
mW
833
°C/W
Operating and Storage Junction
Temperature Range
T_J, T_stg
−55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
MARKING DIAGRAM
1P M
1
1P
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT2222ATT1 SOT−416 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 2
Publication Order Number:
MMBT2222ATT1/D