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MMBFU310LT1_05 Datasheet, PDF (2/4 Pages) ON Semiconductor – JFET Transistor N-Channel | |||
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MMBFU310LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
GateâSource Breakdown Voltage â (IG = â1.0 mAdc, VDS = 0)
Gate 1 Leakage Current â (VGS = â15 Vdc, VDS = 0)
Gate 2 Leakage Current â (VGS = â15 Vdc, VDS = 0, TA = 125°C)
Gate Source Cutoff Voltage â (VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
ZeroâGateâVoltage Drain Current â (VDS = 10 Vdc, VGS = 0)
GateâSource Forward Voltage â (IG = 10 mAdc, VDS = 0)
SMALLâSIGNAL CHARACTERISTICS
Forward Transfer Admittance â (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance â (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance â (VGS = â10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance â (VGS = â10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IG1SS
IG2SS
VGS(off)
IDSS
VGS(f)
|Yfs|
|yos|
Ciss
Crss
Min
Max
Unit
â 25
â
â
â 2.5
â
â 150
â 150
â 6.0
Vdc
pA
nAdc
Vdc
24
60
mAdc
â
1.0
Vdc
10
18
mmhos
â
250 mmhos
â
5.0
pF
â
2.5
pF
70
70
60
VDS = 10 V
50
IDSS
40
+25 °C
60
TA = â55°C
50
+25 °C
40
30
+150°C 30
20
+25 °C
20
â55 °C
10
+150°C 10
0
â5.0
â4.0
â3.0
â2.0
â1.0
0
ID â VGS, GATEâSOURCE VOLTAGE (VOLTS)
IDSS â VGS, GATEâSOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics vs GateâSource Voltage
35
30
VDS = 10 V
f = 1.0 MHz
25
TA = â55°C
+25 °C
20
+150°C
15
+25 °C
10
â55 °C
+150°C
5.0
0
5.0
4.0
3.0
2.0
1.0
0
VGS, GATEâSOURCE VOLTAGE (VOLTS)
Figure 2. Forward Transconductance
vs GateâSource Voltage
http://onsemi.com
2
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