MMBFU310LT1_05 Datasheet, PDF (1/4 Pages) ON Semiconductor – JFET Transistor N-Channel

MMBFU310LT1
Preferred Device
JFET Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
V_DS
25
Vdc
Gate−Source Voltage
V_GS
25
Vdc
Gate Current
I_G
10
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0  0.75  0.062 in.
P_D
225
mW
1.8
mW/°C
R_qJA
556
°C/W
T_J, T_stg − 55 to +150 °C
http://onsemi.com
3
GATE
2 SOURCE
1 DRAIN
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
MARKING DIAGRAM
6C M
1
6C
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 3
ORDERING INFORMATION
Device
Package
Shipping^†
MMBFU310LT1 SOT−23 3000 Tape & Reel
MMBFU310LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBFU310LT1/D