MMBFJ309LT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – JFET - VHF/UHF Amplifier Transistor

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I_G = −1.0 mAdc, V_DS = 0)
V_(BR)GSS
− 25
−
−
Vdc
Gate Reverse Current (V_GS = −15 Vdc)
Gate Reverse Current (V_GS = −15 Vdc, T_A = 125°C)
I_GSS
−
−
− 1.0
nAdc
−
−
− 1.0
mAdc
Gate Source Cutoff Voltage
(V_DS = 10 Vdc, I_D = 1.0 nAdc)
MMBFJ309
V_GS(off)
− 1.0
−
− 4.0
Vdc
MMBFJ310, SMMBFJ310
− 2.0
−
− 6.5
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V_DS = 10 Vdc, V_GS = 0)
Gate−Source Forward Voltage
(I_G = 1.0 mAdc, V_DS = 0)
SMALL−SIGNAL CHARACTERISTICS
MMBFJ309
MMBFJ310, SMMBFJ310
I_DSS
12
−
30
mAdc
24
−
60
V_GS(f)
−
−
1.0
Vdc
Forward Transfer Admittance
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
|Y_fs|
8.0
−
18
mmhos
Output Admittance
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
|y_os|
−
−
250
mmhos
Input Capacitance
(V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
C_iss
−
−
5.0
pF
Reverse Transfer Capacitance
(V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
C_rss
−
−
2.5
pF
Equivalent Short−Circuit Input Noise Voltage
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 100 Hz)
e_n
−
10
−
nVń ^ǸHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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