MMBFJ309LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – JFET - VHF/UHF Amplifier Transistor

MMBFJ309L, MMBFJ310L,
SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
• Drain and Source are Interchangeable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
V_DS
25
Vdc
Gate−Source Voltage
V_GS
25
Vdc
Gate Current
I_G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = U for MMBFJ309L, SMMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBFJ309LT1G, SOT−23 3,000 / Tape &
SMMBFJ309LT1G (Pb−Free)
Reel
MMBFJ310LT1G, SOT−23 3,000 / Tape &
SMMBFJ310LT1G (Pb−Free)
Reel
SMMBFJ310LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 8
Publication Order Number:
MMBFJ309LT1/D