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MMBFJ177LT1G_09 Datasheet, PDF (2/3 Pages) ON Semiconductor – JFET Chopper P−Channel − Depletion
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MMBFJ177LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc)
Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc)
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2)
Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc)
Drain Source On Resistance (ID = 500 mAdc)
Input Capacitance
Reverse Transfer Capacitance
VDS = 0, VGS = 10 Vdc
f = 1.0 MHz
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
Symbol
Min
Max
Unit
V(BR)GSS
30
IGSS
−
VGS(off)
0.8
−
Vdc
1.0
nAdc
2.5
Vdc
IDSS
ID(off)
rDS(on)
Ciss
Crss
1.5
20
mAdc
−
1.0
nAdc
−
300
W
−
11
pF
−
5.5
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