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MMBFJ177LT1G_09 Datasheet, PDF (1/3 Pages) ON Semiconductor – JFET Chopper P−Channel − Depletion | |||
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MMBFJ177LT1G
JFET Chopper
PâChannel â Depletion
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainâGate Voltage
VDG
25
Vdc
Reverse GateâSource Voltage
VGS(r)
â25
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation FRâ 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctionâtoâAmbient
Junction and Storage Temperature
1. FRâ5 = 1.0 0.75 0.062 in.
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
TJ, Tstg â55 to +150 °C
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOTâ23 (TOâ236AB)
CASE 318â08
STYLE 10
MARKING DIAGRAM
6Y MG
G
1
6Y = Specific Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBFJ177LT1G SOTâ23 3000 Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 4
Publication Order Number:
MMBFJ177LT1/D
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