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MMBF5457LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – JFET - General Purpose Transistor
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MMBF5457LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
IGSS
VGS(off)
Gate Source Voltage
VGS
(VDS = 15 Vdc, ID = 100 mAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 2)
(VDS = 15 Vdc, VGS = 0)
IDSS
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 2)
|Yfs|
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Common Source Admittance
|yos|
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
Ciss
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
Crss
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
Min
−25
−
−
−0.5
−
1.0
1000
−
−
−
Typ
−
−
−
−
− 2.5
−
−
10
4.5
1.5
Max
Unit
−
Vdc
−1.0
−200
− 6.0
nAdc
Vdc
−
Vdc
5.0
mAdc
5000 mmhos
50
mmhos
7.0
pF
3.0
pF
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