MMBF5457LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – JFET - General Purpose Transistor

MMBF5457LT1
Preferred Device
JFET − General Purpose
Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
Drain−Gate Voltage
Reverse Gate−Source Voltage
Gate Current
THERMAL CHARACTERISTICS
V_DS
V_DG
V_GS(r)
I_G
25
Vdc
25
Vdc
−25
Vdc
10
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1)
(T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
3
GATE
2 SOURCE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6MG
G
1
6
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBF5457LT1
SOT−23 3000/Tape & Reel
MMBF5457LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
July, 2005 − Rev. 4
Publication Order Number:
MMBF5457LT1/D