MMBF170L Datasheet, PDF (2/5 Pages) ON Semiconductor – Power MOSFET

MMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (V_GS = 0, I_D = 100 mA)
Gate−Body Leakage Current, Forward (V_GSF = 15 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 1)
V_(BR)DSS
I_GSS
60
−
Vdc
−
10
nAdc
Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0 mA)
Static Drain−Source On−Resistance (V_GS = 10 Vdc, I_D = 200 mA)
On−State Drain Current (V_DS = 25 Vdc, V_GS = 0)
DYNAMIC CHARACTERISTICS
V_GS(th)
r_DS(on)
I_D(off)
0.8
3.0
Vdc
−
5.0
W
−
0.5
mA
Input Capacitance
(V_DS = 10 Vdc, V_GS = 0 V, f = 1.0 MHz)
C_iss
−
60
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(V_DD = 25 Vdc, I_D = 500 mA, R_gen = 50 W)
Figure 1
t_d(on)
t_d(off)
−
10
ns
−
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBF170LT1G
SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
MMBF170LT3G
SOT−23 (TO−236)
(Pb−Free)
10000 / Tape & Reel
NVBF170LT1G*
SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
PULSE
GENERATOR
50 W
125 W
V_in
40 pF
50 W 1 MW
20 dB 50 W
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
V_out
t_on
t_d(on)
OUTPUT
INVERTED
V_out
INPUT
V_in ^10%
(V_in AMPLITUDE 10 VOLTS)
t_r
t_d(off)
90%
10%
50%
PULSE WIDTH
t_off
t_f
90%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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