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MMBF170L Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET | |||
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MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, NâChannel SOTâ23
Features
⢠NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ101
Qualified and PPAP Capable
⢠These Devices are PbâFree and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
DrainâSource Voltage
DrainâGate Voltage
GateâSource Voltage
â Continuous
â Nonârepetitive (tp ⤠50 ms)
Drain Current â Continuous
â Pulsed
THERMAL CHARACTERISTICS
VDSS
60
Vdc
VDGS
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
0.5
Adc
IDM
0.8
Characteristic
Symbol Max Unit
Total Device Dissipation FRâ 5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, JunctionâtoâAmbient
Junction and Storage Temperature
RqJA
TJ, Tstg
556
â55 to
+150
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ 5 = 1.0 0.75 0.062 in.
www.onsemi.com
500 mA, 60 V
RDS(on) = 5 W
SOTâ23
CASE 318
STYLE 21
NâChannel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z MG
G
Gate 1
2 Source
6Z
= Specific Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 â Rev. 10
Publication Order Number:
MMBF170LT1/D
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