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| MMBD352WT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Schottky Barrier Diode | |||
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MMBD352WT1G, NSVMMBD352WT1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
VF
V
â
0.60
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
IR
mA
â
0.25
â
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
pF
â
1.0
TYPICAL CHARACTERISTICS
100
1.0
TA = 85ï°C
0.9
10
TA = -40ï°C
0.8
1.0
TA = 25ï°C
0.7
0.1
0.6
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
4.0
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
http://onsemi.com
2
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