MMBD2835LT1G_09 Datasheet, PDF(2/4 Page) ON Semiconductor

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MMBD2835LT1G_09 Datasheet, PDF (2/4 Pages) ON Semiconductor – Monolithic Dual Switching Diodes

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MMBD2835LT1G, MMBD2836LT1G

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IR = 100 mAdc)

MMBD2835LT1G

V(BR)

MMBD2836LT1G

Reverse Voltage Leakage Current (Note 3)

(VR = 30 Vdc)

(VR = 50 Vdc)

MMBD2835LT1G

MMBD2836LT1G

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 100 mAdc)

Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)

3. For each individual diode while the second diode is unbiased.

trr

Max

Unit

Vdc

nAdc

100

4.0

1.0

Vdc

1.0

1.2

4.0

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 W OUTPUT

PULSE

GENERATOR

0.1 mF

10%

50 W INPUT

SAMPLING

OSCILLOSCOPE

90%

INPUT SIGNAL

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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