MMBD2835LT1G_09 Datasheet, PDF (1/4 Pages) ON Semiconductor – Monolithic Dual Switching Diodes

MMBD2835LT1G,
MMBD2836LT1G
Monolithic Dual Switching
Diodes
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
MMBD2835LT1G V_R
MMBD2836LT1G
35
Vdc
75
Forward Current
THERMAL CHARACTERISTICS
I_F
100
mAdc
Total Device Dissipation FR− 5 Board
(Note 1)
T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT−23 (TO −236AB)
CASE 318 −08
STYLE 12
MARKING DIAGRAM
xxx MG
G
1
xxx = Specific Device Code
A3X = MMBD2835LT1G
A2X = MMBD2836LT1G
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBD2835LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
MMBD2836LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
MMBD2835LT1/D