MJF6388_06 Datasheet, PDF (2/8 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS

MJF6388 (NPN), MJF6668 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T_C = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Emitter Sustaining Voltage (Note 4)}
(I_C = 30 mAdc, I_B = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = 80 Vdc, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector Cutoff Current (V}CE ^{= 100 Vdc, V}EB(off) ^{= 1.5 Vdc, T}C ^{= 125_C)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(V_CB = 100 Vdc, I_E = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VBE = 5.0 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS (Note 4)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{DC Current Gain (I}C ^{= 5.0 Adc, V}CE ^{= 3.0 Vdc)}
DC Current Gain (I_C = 8.0 Adc, V_CE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Emitter Saturation Voltage (I}C ^{= 5.0 Adc, I}B ^{= 0.01 Adc)}
Collector−Emitter Saturation Voltage (I_C = 8.0 Adc, I_B = 80 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)}
Base−Emitter Saturation Voltage (I_C = 10 Adc, I_B = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base−Emitter On Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 8.0 Adc, VCE = 4.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Small−Signal Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)}
MJF6388
MJF6668
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Insulation Capacitance}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Collector−to−External Heatsink)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Small−Signal Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.}
Symbol
V_CEO(sus)
I_CEO
I_CEX
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
|h_fe|
C_ob
C_c−hs
h_fe
Min
Max
Unit
100
−
Vdc
−
10
mAdc
−
10
mAdc
−
3.0
mAdc
−
10
mAdc
−
2.0
mAdc
3000
15000
−
1000
−
200
−
100
−
−
2.0
Vdc
−
2.0
−
2.5
−
3.0
−
2.8
Vdc
−
4.5
−
2.5
Vdc
20
−
−
−
200
pF
300
−
3.0 Typ
pF
1000
−
−
NPN
MJF6388
COLLECTOR
PNP
MJF6668
COLLECTOR
BASE
≈ 8 k ≈ 120
BASE
≈ 8 k ≈ 120
EMITTER
Figure 1. Darlington Schematic
EMITTER
http://onsemi.com
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