MJF6388_06 Datasheet, PDF (1/8 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS

MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
• Isolated Overmold Package, TO−220 Type
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and
TIP107
• 100 V_CEO(sus)
• 10 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain − 1000 (Min) @ I_C = 5.0 Adc
• High Isolation Voltage (up to 4500 VRMS)
• Case 221D is UL Recognized at 3500 VRMS: File #E69369
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
V_CEO
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Base Voltage}
V_CB
100
Vdc
Emitter−Base Voltage
V_EB
5.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RMS Isolation Voltage (Note 1)}
V_ISOL
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Test No. 1 Per Figure 14
4500
Test No. 2 Per Figure 15
3500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Test No. 3 Per Figure 16}
1500
(for 1 sec, R.H. < 30%, T_A = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak (Note 2)}
I_C
10
Adc
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Total Power Dissipation (Note 3) @ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
I_B
P_D
P_D
T_J, T_stg
1.0
40
0.31
2.0
0.016
–65 to +150
Adc
W
W/_C
W
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case (Note 3) RqJC}
4.0
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
R_qJA
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Lead Temperature for Soldering Purposes
T_L
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Maximum ratings are those values beyond which device damage can occur.}
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
MARKING
DIAGRAM
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
MJF6xy8G
AYWW
MJF6xy8
G
A
Y
WW
= Specific Device Code
x = 3 or 6
y = 6 or 8
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
MJF6388
MJF6388G
MJF6668
MJF6668G
Package
Shipping
TO−220 FULLPACK 50 Units/Rail
TO−220 FULLPACK
(Pb−Free)
TO−220 FULLPACK
50 Units/Rail
50 Units/Rail
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 8
Publication Order Number:
MJF6388/D