MJF3055 Datasheet, PDF (2/4 Pages) Motorola, Inc – COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJF3055 MJF2955}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 90 Vdc, IE = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Leakage (VEB = 5 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)}
Collector–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 4 Adc, IB = 0.4 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 10 Adc, IB = 3.3 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Current–Gain–Bandwidth Product}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{v (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.}
Symbol
Min
VCEO(sus)
90
ICES
—
ICBO
—
IEBO
—
hFE
20
5
VCE(sat)
—
—
VBE(on)
—
fT
2
Max
Unit
—
Vdc
1
µAdc
1
µAdc
1
µAdc
100
—
—
Vdc
1
2.5
1.5
Vdc
—
MHz
20
10
5
3
TJ = 150°C
2
100 µs
5 ms
dc
1 ms
1
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
0.5
THERMAL LIMIT @ TC = 25°C
0.3
(SINGLE PULSE)
0.2
1
23 5
10
20 30 50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Maximum Forward Bias Safe
Operating Area
500
300
200 _{TJ = 150°C}
100
25°C
50
– 55°C
30
20
VCE = 2 V
10
5
0.01 0.02
0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5 10
2
TJ = 25°C
1.6
PNP
MJF2955
1.4
1.2
TJ = 25°C
1
PNP
MJF3055
1.2
0.8 _{VBE(sat) @ IC/IB = 10}
0.8 ^{VBE(sat) @ IC/IB = 10}
0.6
VBE @ VCE = 2 V
VBE @ VCE = 3 V
0.4
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3 0.5
1
23 5
10
IC, COLLECTOR CURRENT (AMP)
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3 0.5
1
23 5
10
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
2
Motorola Bipolar Power Transistor Device Data