MJE371G Datasheet, PDF (2/3 Pages) ON Semiconductor – Plastic Medium-Power PNP Silicon Transistor

MJE371G
10
5.0
1.0 ms
3.0
2.0
1.0
T_J = 150°C
5.0 ms
dc
0.5
BONDING WIRE LIMIT
0.3
SECOND BREAKDOWN LIMIT
0.2
THERMAL LIMIT @ T_C = 25°C
100 ms
0.1
2.0
4.0 6.0 8.0 10
20
40 60
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
10
7.0
5.0
150°C
T_J = 25°C
3.0
2.0
- 55°C
1.0
0.7
0.5
0.3
0.2
V_CE = 1.0 Vdc
0.1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
2.0 3.0 4.0
2.0
1.6
T_J = 25°C
1.2
0.8
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 1.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 3. “On” Voltage
1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2
0.1
0.1 _0.05
0.07 _0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
q_JC(t) = r(t) q_JC
q_JC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
50 100 200
500 1000
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