MJE371G Datasheet, PDF (1/3 Pages) ON Semiconductor – Plastic Medium-Power PNP Silicon Transistor

MJE371G
Plastic Medium-Power
PNP Silicon Transistor
This device is designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 20 Watt audio
amplifiers utilizing complementary symmetry circuitry.
Features
• High DC Current Gain
• MJE371 is Complementary to NPN MJE521
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ T_C = 25_C
Derate above 25_C
V_CEO
V_CB
V_EB
I_C
I_CM
I_B
P_D
40
Vdc
40
Vdc
4.0
Vdc
4.0
Adc
8.0
Adc
2.0
Adc
40
W
320
mW/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case R_qJC
3.12
Unit
_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I_C = 100 mAdc, I_B = 0) (Note 1)
Collector−Base Cutoff Current
(V_CB = 40 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_EB = 4.0 Vdc, I_C = 0)
V_CEO(sus)
Vdc
40 −
I_CBO
mAdc
− 100
I_EBO
mAdc
− 100
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I_C = 1.0 Adc, V_CE = 1.0 Vdc)
h_FE
−
40 −
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
1. Pulse Test: Pulse Width ≤Ă300Ăms, Duty Cycle ≤Ă2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 9
http://onsemi.com
4 AMPERES
POWER TRANSISTOR
PNP SILICON
40 VOLTS, 40 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
JE371G
Y
= Year
WW = Work Week
JE371 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE371G
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
MJE371/D