MJE344_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – Plastic NPN Silicon Medium−Power Transistor

MJE344
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T_C = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Emitter Sustaining Voltage (I}C ^{= 1.0 mAdc, I}B ^{= 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector Cutoff Current (VCE = 200 Vdc, IB = 0)}
Collector Cutoff Current (V_CB = 200 Vdc, I_E = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)}
Symbol
Min
V_CEO(sus)
200
I_CEO
−
I_CBO
−
I_EBO
−
h_FE
30
V_CE(sat)
−
V_BE(on)
−
f_T
15
C_ob
−
h_fe
25
Max
Unit
−
Vdc
1.0
mAdc
0.1
mAdc
0.1
mAdc
300
−
1.0
Vdc
1.0
Vdc
−
MHz
15
pF
−
−
1.0
0.5
0.2 T_J = 150°C
500 ms
1.0 ms ^ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.02
THERMAL LIMIT T_C = 25°C
0.01
10
20 30 40 60
100
200 300
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
300
200
T_J = +150°C
100
+100°C
70
+25 °C
50
30
−55 °C
20
V_CE = 2.0 V
V_CE = 10 V
10
1.0 2.0 3.0 5.0 7.0 10 20
50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 10 V
0.4
0.2
0
10
V_CE(sat) @ I_C/I_B = 10
I_C/I_B = 5.0
T_J = +25°C
20 30
50
100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
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