MJE344_06 Datasheet, PDF (1/3 Pages) ON Semiconductor – Plastic NPN Silicon Medium−Power Transistor

MJE344
Plastic NPN Silicon
Medium−Power Transistor
This device is useful for medium voltage applications requiring high
f_T such as converters and extended range amplifiers.
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J, T_stg
Value
Unit
200
Vdc
200
Vdc
5.0
Vdc
500
mAdc
250
mAdc
20
W
0.16
mW/_C
–65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Characteristic}
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q_JC
6.25
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
JE344G
Y
= Year
WW = Work Week
JE344 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE344
MJE344G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 2
Publication Order Number:
MJE344/D