MJE344G Datasheet, PDF (2/3 Pages) ON Semiconductor – Plastic NPN Silicon Medium-Power Transistor

MJE344G
ELECTRICAL CHARACTERISTICS (T_C = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I_C = 1.0 mAdc, I_B = 0)
Collector Cutoff Current (V_CE = 200 Vdc, I_B = 0)
Collector Cutoff Current (V_CB = 200 Vdc, I_E = 0)
Emitter Cutoff Current (V_EB = 5.0 Vdc, I_C = 0)
V_CEO(sus)
200
I_CEO
−
I_CBO
−
I_EBO
−
−
Vdc
1.0
mAdc
0.1
mAdc
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (I_C = 50 mAdc, V_CE = 10 Vdc)
Collector−Emitter Saturation Voltage (I_C = 50 mAdc, I_B = 5.0 mAdc)
Base−Emitter On Voltage (I_C = 50 mAdc, V_CE = 10 Vdc)
h_FE
30
V_CE(sat)
−
V_BE(on)
−
300
−
1.0
Vdc
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (I_C = 50 mAdc, V_CE = 25 Vdc, f = 10 MHz)
f_T
15
−
MHz
Output Capacitance (V_CB = 20 Vdc, I_E = 0, f = 100 kHz)
C_ob
−
15
pF
Small−Signal Current Gain (I_C = 50 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
h_fe
25
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1.0
0.5
0.2 T_J = 150°C
500 ms
1.0 ms ^ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.02
THERMAL LIMIT T_C = 25°C
0.01
10
20 30 40 60
100
200 300
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
300
200
T_J = +150°C
100
+100°C
70
+ 25°C
50
30
- 55°C
20
V_CE = 2.0 V
V_CE = 10 V
10
1.0 2.0 3.0 5.0 7.0 10 20
50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 10 V
0.4
0.2
0
10
V_CE(sat) @ I_C/I_B = 10
I_C/I_B = 5.0
T_J = + 25°C
20 30
50
100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
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