MJE344G Datasheet, PDF (1/3 Pages) ON Semiconductor – Plastic NPN Silicon Medium-Power Transistor

MJE344G
Plastic NPN Silicon
Medium-Power Transistor
This device is useful for medium voltage applications requiring high
f_T such as converters and extended range amplifiers.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation
@ T_C = 25_C
Derate above 25_C
V_CEO
V_CB
V_EB
I_C
I_B
P_D
200
Vdc
200
Vdc
5.0
Vdc
500
mAdc
250
mAdc
20
W
0.16
mW/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
q_JC
6.25
Unit
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 4
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
JE344G
Y
= Year
WW = Work Week
JE344 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE344G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE344/D