MJE270G Datasheet, PDF (2/3 Pages) ON Semiconductor – Complementary Silicon Power Transistors

MJE270G (NPN), MJE271G (PNP)
ELECTRICAL CHARACTERISTICS (T_C = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I_C = 10 mAdc, I_B = 0)
V_CEO(sus)
Vdc
100
−
Collector Cutoff Current
(V_CE = 100 Vdc, I_B = 0)
I_CEO
−
mAdc
1.0
Collector Cutoff Current
(V_CB = 100 Vdc, I_E = 0)
I_CBO
−
mAdc
0.3
Emitter Cutoff Current
(V_BE = 5.0 Vdc, I_C = 0)
I_EBO
−
mAdc
0.1
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V_CE = 40 Vdc, t = 1.0 s, Non−repetitive)
I_S/b
Adc
375
−
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I_C = 20 mAdc, V_CE = 3.0 Vdc)
(I_C = 120 mAdc, V_CE = 10 Vdc)
h_FE
−
500
−
1500
−
Collector−Emitter Saturation Voltage
(I_C = 20 mAdc, I_B = 0.2 mAdc)
(I_C = 120 mAdc, I_B = 1.2 mAdc)
V_CE(sat)
−
−
Vdc
2.0
3.0
Base−Emitter On Voltage
(I_C = 120 mAdc, V_CE = 10 Vdc)
V_BE(on)
−
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I_C = 0.05 Adc, V_CE = 5.0 Vdc, f_test = 1.0 MHz)
f_T
MHz
6.0
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f_T = ⎪h_fe⎪• f_test.
10,000
7000
5000
3000
1000
700
500
300
150°C
25°C
- 55°C
10
V_CE = 3.0 V
5.0
1.0
0.5
0.1
0.05
100
0.015
0.03 0.05 0.07 0.1
0.3
0.5 0.7
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
1.0 1.5
0.01
1.0
dc
MJE270/MJE271
BONDING WIRE LIMIT
THERMAL LIMIT @ T_C = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
3.0
7.0 10
30
70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area
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