MJE270G Datasheet, PDF (1/3 Pages) ON Semiconductor – Complementary Silicon Power Transistors

MJE270G (NPN),
MJE271G (PNP)
Complementary Silicon
Power Transistors
Features
• High Safe Operating Area
I_S/B @ 40 V, 1.0 s = 0.375 A
• Collector−Emitter Sustaining Voltage
V_CEO(sus) = 100 Vdc (Min)
• High DC Current Gain
h_FE @ 120 mA, 10 V = 1500 (Min)
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T_C = 25_C
Derate above 25_C
V_CEO
V_CB
V_EB
I_C
I_CM
I_B
P_D
100
100
5.0
2.0
4.0
0.1
15
0.12
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Power Dissipation
@ T_A = 25_C
Derate above 25_C
P_D
1.5
W
0.012
W/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case
R_qJC
8.33
Thermal Resistance, Junction−to−Ambient
R_qJA
83.3
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 8
http://onsemi.com
2.0 AMPERE
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
100 VOLTS, 15 WATTS
NPN
COLLECTOR 2, 4
PNP
COLLECTOR 2, 4
BASE
1
BASE
1
EMITTER 3
MJE270
EMITTER 3
MJE271
TO−225
CASE 77−09
STYLE 3
123
MARKING DIAGRAM
YWW
JE27xG
Y
WW
JE27x
G
= Year
= Work Week
= Specific Device Code
x= 0 or 1
= Pb−Free Package
ORDERING INFORMATION
Device
MJE270G
MJE271G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
Publication Order Number:
MJE270/D