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MC74VHC125 Datasheet, PDF (2/8 Pages) ON Semiconductor – Quad Bus Buffer | |||
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MC74VHC125
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IIK
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IOK
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD
DC Supply Voltage
â 0.5 to + 7.0
V
DC Input Voltage
â 0.5 to + 7.0
V
DC Output Voltage
Input Diode Current
â 0.5 to VCC + 0.5 V
â 20
mA
Output Diode Current
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air,
SOIC Packagesâ
500
mW
TSSOP Packageâ
450
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ * Absolutemaximumcontinuousratingsarethosevaluesbeyondwhichdamagetothedevice
may occur. Exposure to these conditions or conditions beyond those indicated may
adversely affect device reliability. Functional operation under absoluteâmaximumârated
conditions is not implied.
â Derating â SOIC Packages: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf
DC Supply Voltage
2.0
DC Input Voltage
0
DC Output Voltage
0
Operating Temperature, All Package Types
â 40
Input Rise and Fall Time
VCC = 3.3V ±0.3V 0
VCC =5.0V ±0.5V 0
5.5
5.5
VCC
+ 85
100
20
V
V
V
_C
ns/V
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
TA ⤠85°C
TA ⤠125°C
Symbol
Parameter
Test Conditions
(V) Min Typ Max Min Max Min Max Unit
VIH
Minimum HighâLevel
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL
Maximum LowâLevel
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH
VOL
IOZ
Minimum HighâLevel
Output Voltage
VIN = VIH or VIL
Maximum LowâLevel
Output Voltage
VIN = VIH or VIL
Maximum 3âState
Leakage Current
VIN = VIH or VIL
IOH = â50µA
VIN = VIH or VIL
IOH = â4mA
IOH = â8mA
VIN = VIH or VIL
IOL = 50µA
VIN = VIH or VIL
IOL = 4mA
IOL = 8mA
VIN = VIH or VIL
VOUT = VCC or GND
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
2.0
0.0 0.1
0.1
0.1
V
3.0
0.0 0.1
0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
5.5
±0.25
±2.5
±2.5 µA
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