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MC74HC132A Datasheet, PDF (2/8 Pages) ON Semiconductor – Quad 2-Input NAND Gate with Schmitt-Trigger Inputs | |||
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MC74HC132A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD
DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
â 1.5 to VCC + 1.5 V
â 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air,
Plastic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
(Plastic DIP or SOIC Package)
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature, All Package Types
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf Input Rise and Fall Time (Figure 1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ X *When Vin 0.5 VCC, ICC >> quiescent current.
Min Max Unit
2.0 6.0 V
0 VCC V
â 55 + 125 _C
â
no ns
limit*
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VT+ max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VT+ min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VTâ max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VTâ min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VHmax
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Note 2
Parameter
Maximum PositiveâGoing
Input Threshold Voltage
(Figure 3)
Minimum PositiveâGoing
Input Threshold Voltage
(Figure 3)
Maximum NegativeâGoing
Input Threshold Voltage
(Figure 3)
Minimum NegativeâGoing
Input Threshold Voltage
(Figure 3)
Maximum Hysteresis Voltage
(Figure 3)
Test Conditions
v Vout = 0.1 V
|Iout| 20 µA
v Vout = 0.1 V
|Iout| 20 µA
v Vout = VCC â 0.1 V
|Iout| 20 µA
v Vout = VCC â 0.1 V
|Iout| 20 µA
v Vout = 0.1 V or VCC â 0.1 V
|Iout| 20 µA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VHmin Minimum Hysteresis Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Note 2
(Figure 3)
v Vout = 0.1 V or VCC â 0.1 V
|Iout| 20 µA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ NOTE:1. VHmin > (VT+ min) â (VTâ max); VHmax = (VT+ max) + (VTâ min).
VCC
V
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Guaranteed Limit
â 40_C to â 55_C to
25_C
+ 85_C + 125_C Unit
1.5
1.5
1.5
V
3.15
3.15
3.15
4.2
4.2
4.2
1.0
0.95
0.95
V
2.3
2.25
2.25
3.0
2.95
2.95
0.9
0.95
0.95
V
2.0
2.05
2.05
2.6
2.65
2.65
0.3
0.3
0.9
0.9
1.2
1.2
0.3
V
0.9
1.2
1.2
1.2
1.2
V
2.25
2.25
2.25
3.0
3.0
3.0
0.2
0.2
0.4
0.4
0.5
0.5
0.2
V
0.4
0.5
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book
(DL129/D).
http://onsemi.com
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