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MBT3904DW1 Datasheet, PDF (2/8 Pages) ON Semiconductor – Dual General Purpose Transistors
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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBL
−
ICEX
−
Vdc
−
Vdc
−
Vdc
−
nAdc
50
nAdc
50
hFE
−
40
−
70
−
100
300
60
−
30
−
VCE(sat)
−
−
Vdc
0.2
0.3
VBE(sat)
Vdc
0.65
0.85
−
0.95
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
MHz
300
−
pF
−
4.0
pF
−
8.0
kW
1.0
10
2.0
12
X 10− 4
0.5
8.0
0.1
10
−
100
400
100
400
mmhos
1.0
40
3.0
60
dB
−
5.0
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