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| MBRS3100T3G_16 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier | |||
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MBRS3100T3G, NRVBS3100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100ï°C)
VRRM
100
V
VRWM
VR
IF(AV)
A
3.0
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
A
130
Operating Junction Temperature Range (Note 1)
TJ
â 65 to +175
ï°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctionâtoâAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctionâtoâLead
Symbol
RqJL
Value
11
Unit
ï°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25ï°C)
(iF = 6.0 A, TJ = 25ï°C)
(iF = 3.0 A, TJ = 125ï°C)
(iF = 6.0 A, TJ = 125ï°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25ï°C)
(Rated dc Voltage, TJ = 125ï°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ï£ 2.0%.
Symbol
Value
Unit
VF
V
0.79
0.90
0.62
0.70
iR
mA
0.05
5.0
http://onsemi.com
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