MBRS3100P Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3100P
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
100
V
V_RWM
V_R
Average Rectified Forward Current
(At Rated V_R, T_L = 100°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I_F(AV)
A
3.0
I_FSM
A
130
Operating Junction Temperature Range (Note 1)
T_J
− 65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Symbol
R_qJL
Value
11
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i_F = 3.0 A, T_J = 25°C)
(i_F = 6.0 A, T_J = 25°C)
(i_F = 3.0 A, T_J = 125°C)
(i_F = 6.0 A, T_J = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Value
Unit
V_F
V
0.79
0.90
0.62
0.70
i_R
mA
0.2
5.0
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