MBRS3100P Datasheet, PDF (1/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3100P
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• These are Pb-Free Packages
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
SMC
CASE 403AC
MARKING DIAGRAM
AYWW
B310G
G
B310
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MBRS3100PT3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
August, 2015 − Rev. 0
Publication Order Number:
MBRS3100P/D