English
Language : 

MBRS260T3 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier
MBRS260T3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction-to-Lead (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(VR = 60 V)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
Symbol
RθJL
RθJA
vF
IR
Value
24
80
TJ = 25°C
0.51
0.63
TJ = 25°C
0.2
TJ = 125°C
0.475
0.55
TJ = 125°C
10
Unit
°C/W
Volts
mA
10
10
125°C
75°C
25°C
1
1
125°C
75°C
25°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
0
125°C
75°C
25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100
10
60
0
25°C
f = 1 MHz
10
20
30
40
50
60
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
http://onsemi.com
2