MBRS260T3 Datasheet, PDF (1/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS260T3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
• Compact Package with J-Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over-Voltage Protection
• Low Forward Voltage Drop
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 95 mg (approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix
to Part Number
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
• Marking: B26
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
60 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
B26
B26 = Device Code
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_L = 95°C)
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage/Operating Case
Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FSM
Value
60
2.0
60
Unit
V
A
A
T_stg, T_C -55 to +150 °C
T_J
dv/dt
-55 to +125 °C
10,000
V/ms
ORDERING INFORMATION
Device
Package
Shipping
MBRS260T3
SMB
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
January, 2003 - Rev. 1
Publication Order Number:
MBRS260T3/D