MBRS230LT3_05 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS230LT3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
30
V
V_RWM
V_R
Average Rectified Forward Current
(At Rated V_R, T_C = 110°C)
I_O
2.0
A
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 20 kHz, T_C = 105°C)
I_FRM
4.0
A
Non−Repetitive Peak Surge Current
I_FSM
40
A
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
T_stg, T_C
−55 to +175
°C
Operating Junction Temperature
T_J
−55 to +125
°C
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2
(I_F = 2.0 A)
(I_F = 4.0 A)
Maximum Instantaneous Reverse Current (Note 2)
see Figure 4
(V_R = 30 V)
(V_R = 15 V)
1. Minimum pad size (0.108″ X 0.085″) for each lead on FR4 board.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
Symbol
R_qJL
R_qJA
Value
18.6
135
Unit
°C/W
T_J = 25°C
T_J = 125°C
V_F
0.50
V
0.45
0.60
0.63
T_J = 25°C
T_J = 125°C
I_R
1
75
mA
0.31
35
10
10
1
0.1 ^{TJ = 125°C}
100°C 25°C
−55°C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
v_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
T_J = 125°C
1
0.1
0
100°C
25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
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